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sqj412ep www.vishay.com vishay siliconix s12-1860-rev. c, 13-aug-12 1 document number: 65935 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 40 v (d-s) 175 c mosfet features ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. e. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l. the end of the lead terminal is exposed co pper (not plated) as a result of the singulation process in manufacturing. a solder fill et at the exposed copper tip cannot be guaranteed and is not r equired to ensure adequate bottom side solder interconnection. f. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. product summary v ds (v) 40 r ds(on) ( ? ) at v gs = 10 v 0.0041 r ds(on) ( ? ) at v gs = 4.5 v 0.0052 i d (a) 32 configuration single d g s n-channel mosfet 4 6.15 mm powerpak ? so-8l single 5.13 mm 3 2 1 g s s s d ordering information package powerpak so-8l lead (pb)-free and halo gen-free sqj412ep-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 32 a t c = 125 c 32 continuous source curr ent (diode conduction) a i s 32 pulsed drain current b i dm 128 single pulse avalanche current l = 0.1 mh i as 53 single pulse avalanche energy e as 140 mj maximum power dissipation b t c = 25 c p d 83 w t c = 125 c 27 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 65 c/w junction-to-case (drain) r thjc 1.8
sqj412ep www.vishay.com vishay siliconix s12-1860-rev. c, 13-aug-12 2 document number: 65935 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 40 v - - 1 a v gs = 0 v v ds = 40 v, t j = 125 c - - 50 v gs = 0 v v ds = 40 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 10.3 a - 0.0035 0.0041 ? v gs = 10 v i d = 10.3 a, t j = 125 c - 0.0053 0.0070 v gs = 10 v i d = 10.3 a, t j = 175 c - 0.0065 0.0085 v gs = 4.5 v i d = 8.7 a - 0.0042 0.0052 forward transconductance b g fs v ds = 15 v, i d = 16 a - 85 - s dynamic b input capacitance c iss v gs = 0 v v ds = 20 v, f = 1 mhz - 4950 5950 pf output capacitance c oss - 630 760 reverse transfer capacitance c rss - 270 330 total gate charge c q g v gs = 10 v v ds = 20 v, i d = 10 a - 80 120 nc gate-source charge c q gs - 13.1 - gate-drain charge c q gd - 12.3 - gate resistance r g f = 1 mhz 0.36 0.72 1.08 ? turn-on delay time c t d(on) v dd = 20 v, r l = 2 ? i d ? 10 a, v gen = 4.5 v, r g = 6 ? -4555 ns rise time c t r - 150 180 turn-off delay time c t d(off) -5060 fall time c t f -5570 source-drain diode ratings and characteristics b pulsed current a i sm - - 128 a forward voltage v sd i f = 10 a, v gs = 0 - 0.8 1.1 v
sqj412ep www.vishay.com vishay siliconix s12-1860-rev. c, 13-aug-12 3 document number: 65935 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 14 28 42 56 70 0246810 v gs =10vthru4v v gs =3v v d s - drain-to- s ource voltage (v) - drain current (a) i d 0 40 80 120 160 200 0 1224364860 t c = 125 c t c = - 55 c t c = 25 c i d - drain current (a) - transconductance (s) g fs c r ss 0 1000 2000 3000 4000 5000 6000 7000 0 10203040 c i ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 14 28 42 56 70 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - g ate-to- s ource voltage (v) - drain current (a) i d 0.000 0.003 0.006 0.009 0.012 0.015 0 1428425670 v gs =4.5v v gs =10v - on-re s i s tance ( ) r d s (on) i d - drain current (a) 0 2 4 6 8 10 0 102030405060708090 - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v gs v d s = 20 v l d = 10 a
sqj412ep www.vishay.com vishay siliconix s12-1860-rev. c, 13-aug-12 4 document number: 65935 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs . junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 i d =15a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-re s i s tance r d s (on) 0 0.01 0.02 0.03 0.04 0.05 0246810 t j = 25 c t j = 150 c - on-re s i s tance ( ) r d s (on) v gs - g ate-to- s ource voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v s d - s ource-to-drain voltage (v) - s ource current (a) i s - 1.5 - 1.1 - 0.7 - 0.3 0.1 0.5 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =5ma variance (v) v gs (th) t j - temperature (c) 40 42 44 46 48 50 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma v ds - drain-to-source voltage (v) t j - junction temperature (c)
sqj412ep www.vishay.com vishay siliconix s12-1860-rev. c, 13-aug-12 5 document number: 65935 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 100 m s , 1 s , 10 s , dc i d limited 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are wave p u lse d u ration (s) normalized effective transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 58 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. s u rface mo u nted p dm
sqj412ep www.vishay.com vishay siliconix s12-1860-rev. c, 13-aug-12 6 document number: 65935 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65935 . 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 d u ty cycle = 0.5 sq u are wave p u lse d u ration (s) normalized effective transient thermal impedance single p u lse 0.02 0.05
ordering information www.vishay.com vishay siliconix revision: 07-oct-15 1 document number: 65804 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l ordering codes for the sq rugged series po wer mosfets in the powerpak so-8l package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sqj200ep - sqj200ep-t1_ge3 sqj401ep sqj401ep-t1-ge3 sqj401ep-t1_ge3 sqj402ep sqj402ep-t1-ge3 sqj402ep-t1_ge3 sqj403eep sqj403eep-t1-ge3 sqj403eep-t1_ge3 sqj403ep - sqj403ep-t1_ge3 sqj410ep sqj410ep-t1-ge3 sqj410ep-t1_ge3 sqj412ep sqj412ep-t1-ge3 sqj412ep-t1_ge3 sqj422ep sqj422ep-t1-ge3 sqj422ep-t1_ge3 sqj431ep sqj431ep-t1-ge3 sqj431ep-t1_ge3 sqj443ep sqj443ep-t1-ge3 sqj443ep-t1_ge3 sqj456ep sqj456ep-t1-ge3 sqj456ep-t1_ge3 sqj460aep - sqj460aep-t1_ge3 sqj461ep sqj461ep-t1-ge3 sqj461ep-t1_ge3 sqj463ep sqj463ep-t1-ge3 sqj463ep-t1_ge3 sqj465ep sqj465ep-t1-ge3 sqj465ep-t1_ge3 sqj469ep sqj469ep-t1-ge3 sqj469ep-t1_ge3 sqj486ep sqj486ep-t1-ge3 sqj486ep-t1_ge3 sqj488ep sqj488ep-t1-ge3 sqj488ep-t1_ge3 sqj500aep sqj500aep-t1-ge3 sqj500aep-t1_ge3 sqj840ep sqj840ep-t1-ge3 sqj840ep-t1_ge3 sqj844aep sqj844aep-t1-ge3 sqj844aep-t1_ge3 sqj850ep sqj850ep-t1-ge3 sqj850ep-t1_ge3 sqj858aep sqj858aep-t1-ge3 sqj858aep-t1_ge3 sqj886ep sqj886ep-t1-ge3 sqj886ep-t1_ge3 sqj910aep sqj910aep-t1-ge3 sqj910aep-t1_ge3 sqj912aep sqj912aep-t1-ge3 sqj912aep-t1_ge3 sqj940ep sqj940ep-t1-ge3 sqj940ep-t1_ge3 sqj942ep sqj942ep-t1-ge3 sqj942ep-t1_ge3 sqj951ep sqj951ep-t1-ge3 sqj951ep-t1_ge3 sqj952ep - sqj952ep-t1_ge3 sqj960ep sqj960ep-t1-ge3 sqj960ep-t1_ge3 sqj963ep sqj963ep-t1-ge3 sqj963ep-t1_ge3 sqj968ep sqj968ep-t1-ge3 sqj968ep-t1_ge3 sqj980aep sqj980aep-t1-ge3 sqj980aep-t1_ge3 sqj992ep sqj992ep-t1-ge3 sqj992ep-t1_ge3
package information www.vishay.com vishay siliconix revision: 07-sep-15 1 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l case outline for non-al parts
package information www.vishay.com vishay siliconix revision: 07-sep-15 2 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? millimeters will gover dim. millimeters inches min. nom. max. min. nom. max. a 1.00 1.07 1.14 0.039 0.042 0.045 a1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 d 5.00 5.13 5.25 0.197 0.202 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.86 3.96 4.06 0.152 0.156 0.160 d3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 bsc 0.050 bsc e 6.05 6.15 6.25 0.238 0.242 0.246 e1 4.27 4.37 4.47 0.168 0.172 0.176 e2 3.18 3.28 3.38 0.125 0.129 0.133 f - - 0.15 - - 0.006 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.51 0.020 w 0.23 0.009 w1 0.41 0.016 w2 2.82 0.111 w3 2.96 0.117 q 0 - 10 0 - 10 ecn: c15-1122-rev. c, 07-sep-15 dwg: 5976
pad pattern www.vishay.com vishay siliconix revision: 07-feb-12 1 document number: 63818 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for powerpak ? so-8l single recommended mi nimum pad s dimen s ion s in mm (inche s ) 5.000 (0.197) 2.310 (0.091) 0.510 (0.020) 0.595 (0.023) 4.061 (0.160) 3.630 (0.143) 0.410 (0.016) 0.710 (0.028) 0.610 (0.024) 2.715 (0.107) 1.270 (0.050) 1.905 (0.075) 0.860 (0.034) 0.820 (0.032) 7.250 (0.285) 8.250 (0.325) 6.250 (0.246) 1.291 (0.051)
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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